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: Guangdong Lingxun Microelectronics Co., Ltd

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Guangdong Lingxun Microelectronics Co., Ltd

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Guangdong Lingxun Microelectronics Co., Ltd

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City: Dongguan

Province/State: Guangdong

Country/Region: China

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: 11A 650V 340mΩ TO-252 High Power MOSFET For Switching Charger

: High Voltage N Type High Power Semiconductor with Low Leakage

: TO-220F Metal Oxide Semiconductor Field Effect Transistors 15A 600V 274mΩ

: Low Switching High Power Semiconductor 15A 650V 238mΩ For DC-DC Converters

: 20A 650V 150mΩ Cool MOS For Switched Mode Power Supplies

: 19A 600V 160mΩ High Power Semiconductor For Industrial Power Supplies

: N Channel High Voltage Semiconductor With Low Leakage Junction Capacitance

: TO-252 Surface Mount High Power Semiconductor 5A 500V 1.33Ω For Hairdryer

: N Type High Voltage Transistor TO-220F with Low Junction Capacitance

: N Channel High Power Semiconductor TO-220F With High Temperature Resistance

: High Power Low Leakage N Channel IGBT High Temperature Resistant

: TO-247 N Channel High Power Semiconductor For Charging Pile

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